Review-1

Review Questions in BJT - Part1

1. Explain the reason why the characteristic curves in the output characteristics of CB configuration are flat and those curves in CE configuration are having a slope?
2. In which configuration a forward biasing voltage is required to  reduce the collector current to zero. State the reason.
3. Why the cut-off region in the CE configuration is not well defined?
4. Why the input characteristic of CC configuration is quite different from those of CB and CE configurations?
5. Explain briefly the method to obtain the Early voltage from the output characteristics of a BJT?
6. State the applications of CB, CE and CC configurations and also elucidate which configuration is profusely used and why?
7. What factors facilitates the use of hybrid parameters to analyze BJT?
8. List out the consequences of Early effect?
9. State the reason for increase in I_B for a given value of V_BE with the increase in V_CE in the input characteristics of a CE configuration?
10. Draw the construction of a BJT precisely and annotate with the doping profile of various layers?
11. State the reasons for such construction in Q10?
12. State the reasons for such doping profiles in Q10?
13. For a certain transistor, I_B=20µA; I_C=2mA and β=100 then compute I_CB0.
14. A particular BJT has a value of α=0.95, determine the values of β and γ.
15. State the constituents of collector current in a BJT and state their causes?
16. Derive the current gain characteristics for V_CE=6V from the CE output characteristics in
    Figure-1.

    

    Figure 1